#include STM32_HAL_H

int flash_init(void)
{
    return 0;
}

#define WANTED_WRP (OB_WRP_SECTOR_0 | OB_WRP_SECTOR_1)
#define WANTED_RDP (OB_RDP_LEVEL_2)
#define WANTED_BOR (OB_BOR_LEVEL3)

void flash_set_option_bytes(void)
{
    FLASH_OBProgramInitTypeDef opts;

    HAL_FLASHEx_OBGetConfig(&opts);

    opts.OptionType = 0;

    if (opts.WRPSector != WANTED_WRP) {
        opts.OptionType = OPTIONBYTE_WRP;
        opts.WRPState = OB_WRPSTATE_ENABLE;
        opts.WRPSector = WANTED_WRP;
        opts.Banks = FLASH_BANK_1;
    }

    if (opts.RDPLevel != WANTED_RDP) {
        opts.OptionType = OPTIONBYTE_RDP;
        opts.RDPLevel = WANTED_RDP;
    }

    if (opts.BORLevel != WANTED_BOR) {
        opts.OptionType = OPTIONBYTE_BOR;
        opts.BORLevel = WANTED_BOR;
    }

    if (opts.OptionType != 0) {
        HAL_FLASHEx_OBProgram(&opts);
    }
}

int flash_erase_sectors(int start, int end, void (*progress)(uint16_t val))
{
    HAL_FLASH_Unlock();
    FLASH_EraseInitTypeDef EraseInitStruct;
    __HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR |
                           FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR | FLASH_FLAG_PGSERR);
    EraseInitStruct.TypeErase = FLASH_TYPEERASE_SECTORS;
    EraseInitStruct.VoltageRange = FLASH_VOLTAGE_RANGE_3;
    EraseInitStruct.NbSectors = 1;
    uint32_t SectorError = 0;
    for (int i = start; i <= end; i++) {
        EraseInitStruct.Sector = i;
        if (HAL_FLASHEx_Erase(&EraseInitStruct, &SectorError) != HAL_OK) {
            HAL_FLASH_Lock();
            return 0;
        }
        if (progress) {
            progress(1000 * (i - start + 1) / (end - start + 1));
        }
    }
    HAL_FLASH_Lock();
    return 1;
}